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Corrections to 鈥淪tructural Integrity of 3-D Metal鈥揑nsulator鈥揗etal Capacitor Embedded in Fully Filled Cu Through-Silicon Via鈥
IEEE Transactions on Components, Packaging and Manufacturing Technology ( IF 2.3 ) Pub Date : 2021-07-20 , DOI: 10.1109/tcpmt.2021.3093736
Ye Lin , Hong Yu Li , Chuan Seng Tan

In the above article [1], a new reference [19] must be added to the end of the last sentence of the second paragraph in Section I: “Recently, Cu TSV filling has been completed, and therefore making it a complete structure which contains both 3-D MIM capacitor and Cu TSV core [19].” The details of [19] are as follows:

中文翻译:


对“全填充铜硅通孔中嵌入的 3D 金属绝缘体”金属电容器的结构完整性的修正



在上述文章[1]中,必须在第一节第二段最后一句末尾添加新的参考文献[19]:“最近,Cu TSV填充已经完成,因此使其成为一个完整的结构,包含 3-D MIM 电容器和 Cu TSV 核心 [19]。” [19]的详细信息如下:
更新日期:2021-07-20
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