A space-divided plasma-enhanced atomic layer deposition (PE-ALD) system in which disk and wafer rotate at the same time was developed. In the space-divided PE-ALD system, the disk and the wafer are each independently rotated and deposited. It has the advantage that high productivity and dispersion can be improved by controlling the rotation speed of the disk and wafer. Also, it can be applied to various processes by changing the design of the upper lid slightly. In this study, a study on the deposition characteristics of SiO₂ thin films was conducted using the developed spatially divided PE-ALD system. The effect of the rotation speed of the disk and wafer on the deposition rate and the uniformity characteristics of the SiO₂ thin film was confirmed, and a study on the correlation with the wet etch rate was conducted.

开发了一种空间分割的等离子体增强原子层沉积（PE-ALD）系统，其中磁盘和晶片同时旋转。在空间分割的 PE-ALD 系统中，磁盘和晶片各自独立旋转和沉积。它的优点是可以通过控制磁盘和晶片的旋转速度来提高生产率和分散性。此外，通过稍微改变上盖的设计，它可以应用于各种工艺。在这项研究中，使用开发的空间分割 PE-ALD 系统对 SiO ₂薄膜的沉积特性进行了研究。圆盘和晶圆转速对SiO ₂沉积速率和均匀性特性的影响 薄膜被确认，并进行了与湿蚀刻速率的相关性的研究。