From an analysis of Pd contact Schottky diodes fabricated on (100) β-Ga₂O₃ wafers, in combination with data extracted from published work, we show that the barrier height inhomogeneity commonly observed in β-Ga₂O₃ Schottky diodes has a strong correlation to the temperature. For doping of ∼5 × 10¹⁷ cm⁻³, the barrier height arising from an inhomogeneous contact continues to increase to a temperature of ∼440 K followed by a decrease upon a further increase in temperature, which is commonly attributed to the bandgap narrowing of the semiconductor referred to as the Varshni shift. At this regime, Schottky characteristics representing close to homogeneous behavior is obtained. Thus, a device under normal operating conditions in a system, which results in an elevated temperature, is expected to exhibit near-homogeneous electrical characteristics.

中文翻译：

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β-Ga2O3肖特基势垒二极管势垒高度不均匀性的温度依赖性

通过对 (100) β -Ga ₂ O ₃晶片上制造的 Pd 接触肖特基二极管的分析，结合从已发表的工作中提取的数据，我们表明在β -Ga ₂ O ₃肖特基二极管中常见的势垒高度不均匀性具有与温度有很强的相关性。掺杂 ∼5 × 10 ¹⁷  cm ^-3，由非均匀接触引起的势垒高度继续增加到约 440 K 的温度，然后在温度进一步升高时降低，这通常归因于半导体的带隙变窄，称为 Varshni 位移。在这种情况下，获得了代表接近均匀行为的肖特基特性。因此，系统中正常操作条件下的设备会导致温度升高，预计会表现出近乎均匀的电气特性。