We demonstrate the fabrication of metal and dielectric nanostructures using interference lithography with extreme ultraviolet (EUV) and soft x-ray synchrotron radiation down to a 2.5 nm wavelength. These specific wavelengths are chosen because of the industrial relevance for EUV lithography and because they are in the vicinity of the oxygen absorption edge of the high-resolution hydrogen silsesquioxane photoresist, allowing for the exposure of thick layers. We investigate the requirements to fabricate such structures and demonstrate that tall metal nanostructures with aspect ratios up to 7 could be achieved by EUV interference lithography and subsequent electroplating. We use the unique depth-of-focus-free property of interference and achromatic Talbot lithography to fabricate uniformly tilted dielectric nanostructures.

中文翻译：

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使用极紫外和软 X 射线干涉光刻法制造高纵横比和倾斜的纳米结构

我们展示了使用干涉光刻和极紫外 (EUV) 和低至 2.5 nm 波长的软 x 射线同步辐射来制造金属和电介质纳米结构。选择这些特定波长是因为 EUV 光刻的工业相关性，并且因为它们位于高分辨率氢倍半硅氧烷光刻胶的氧吸收边缘附近，允许对厚层进行曝光。我们研究了制造这种结构的要求，并证明了纵横比高达 7 的高金属纳米结构可以通过 EUV 干涉光刻和随后的电镀来实现。我们使用干涉和消色差 Talbot 光刻的独特无焦深特性来制造均匀倾斜的介电纳米结构。