The effects of the boron nitride (BN) content on the electrical, thermal, and mechanical properties of porous SiC ceramics were investigated in N₂ and Ar atmospheres. The electrical resistivity was predominantly controlled by the sintering atmosphere and secondarily by the BN concentration, whereas the thermal conductivity and flexural strength were more susceptible to changes in the porosity and necking area between the SiC grains. The electrical resistivities of argon-sintered porous SiC ceramics (6.3 × 10⁵ – 1.6 × 10⁶ Ω·cm) were seven orders of magnitude higher than those of nitrogen-sintered porous SiC ceramics (1.5 × 10⁻¹ – 6.0 × 10⁻¹ Ω·cm). The thermal conductivity and flexural strength of the argon-sintered porous SiC ceramics increased from 8.4–11.6 W·m⁻¹ K⁻¹ and from 9.3–28.2 MPa, respectively, with an increase in the BN content from 0 to 1.5 vol%, which was attributed to the increase in necking area and the decrease in porosity.

在 N ₂和 Ar 气氛中研究了氮化硼 (BN) 含量对多孔 SiC 陶瓷的电学、热学和机械性能的影响。电阻率主要受烧结气氛控制，其次受 BN 浓度控制，而热导率和弯曲强度更容易受到 SiC 晶粒之间孔隙率和颈缩面积的变化的影响。氩气烧结多孔碳化硅陶瓷（6.3 × 10 ⁵ – 1.6 × 10 ⁶ Ω·cm）的电阻率比氮烧结多孔碳化硅陶瓷（1.5 × 10 ^-1 - 6.0 × 10 ^-）高七个数量级^{。 1}Ω·cm)。氩烧结多孔 SiC 陶瓷的热导率和弯曲强度分别从 8.4-11.6 W·m ^-1  K ^-1和 9.3-28.2 MPa 增加，BN 含量从 0 增加到 1.5 vol%，这归因于颈缩面积的增加和孔隙率的减少。