Rydberg entangling gates in silicon,Physical Review Research

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Rydberg entangling gates in silicon
Physical Review Research ( IF 3.5 ) Pub Date : 2021-07-23 , DOI: 10.1103/physrevresearch.3.033086
E. Crane ₁ , A. Schuckert ₂ , N. H. Le ₃ , A. J. Fisher ₄

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In this paper we propose a Rydberg entangling gate scheme which we demonstrate theoretically to have an order-of-magnitude improvement in fidelities and speed over existing cold atom protocols. It requires a large Rabi frequency compared to the interaction strength, which is difficult in cold atoms, but natural in donors in silicon, where it could help overcome the strenuous requirements on atomic precision donor placement and substantial gate tuning, which so far has hampered scaling. Furthermore, the gate operation would be ultrafast, on the order of picoseconds. We calculate multivalley van der Waals, induced electric dipole and total Rydberg interactions for several donor species using the finite-element method and show that they are important even for low-lying excited states. We show that Rydberg gate operation is possible within the lifetime of donor excited states with 99.9% fidelity for the creation of a Bell state in the presence of decoherence.

中文翻译：

硅中的里德堡纠缠门

在本文中，我们提出了一个里德堡纠缠门方案，我们在理论上证明了该方案在保真度和速度方面比现有的冷原子协议有一个数量级的改进。与相互作用强度相比，它需要较大的 Rabi 频率，这在冷原子中是困难的，但在硅中的施主中很自然，它可以帮助克服对原子精确施主放置和大量栅极调谐的艰巨要求，这迄今为止阻碍了缩放. 此外，门操作将是超快的，大约为皮秒。我们使用有限元方法计算了几种供体物种的多谷范德华力、感应电偶极子和总里德堡相互作用，并表明它们即使对于低激发态也很重要。

更新日期：2021-07-23

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