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Investigation on CuInS2 Films with Wurtzite Structure Prepared from Nitrates
Integrated Ferroelectrics ( IF 0.7 ) Pub Date : 2021-07-21 , DOI: 10.1080/10584587.2021.1911307
Kegao Liu 1 , Yong Xu 1 , Zhigang Wang 1 , Liuyang Yu 1
Affiliation  

Abstract

The phases, morphology and band gap of CuInS2 films with wurtzite structure prepared by spin-coating and chemical co-reduction method were studied. Experimental results show that, CuInS2 films with wurtzite structure can be prepared by using nitrates at low temperatures below 220 °C. When the anhydrous ethanol is used as the solvent, CuInS2 film samples prepared with the sulfur powder as the sulfur source, the prepared CuInS2 film has a wurtzite structure with poor crystallinity. When the other solvents such as ethylenediamine and ethanolamine were used, the CuInS2 films prepared by using thiourea as the sulfur source also have the wurtzite structure. The product film with sulfur powder consists of a number of irregular particles with diameters between 0.3 and 0.5 μm, while the product films with thiourea consist of a number of flaky crystals and small spherical particles. The band gaps of the CuInS2 films were estimated by extrapolation method. The estimated band gap of the wurtzite CuInS2 film prepared by sulfur powder as sulfur source is about 1.45 eV, which is close to the theoretical value.



中文翻译:

硝酸盐制备纤锌矿结构CuInS2薄膜的研究

摘要

研究了旋涂和化学共还原法制备的具有纤锌矿结构的CuInS 2薄膜的物相、形貌和带隙。实验结果表明,在低于220℃的低温下,使用硝酸盐可以制备具有纤锌矿结构的CuInS 2薄膜。以无水乙醇为溶剂,以硫粉为硫源制备的CuInS 2薄膜样品,制备的CuInS 2薄膜具有纤锌矿结构,结晶度较差。当使用乙二胺和乙醇胺等其他溶剂时,CuInS 2以硫脲为硫源制备的薄膜也具有纤锌矿结构。含硫粉的产品膜由许多直径在0.3-0.5μm之间的不规则颗粒组成,而含硫脲的产品膜由许多片状晶体和小球状颗粒组成。CuInS 2膜的带隙通过外推法估计。以硫粉为硫源制备的纤锌矿CuInS 2薄膜的估计带隙约为1.45 eV,接近理论值。

更新日期:2021-07-22
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