Abstract

The present study reveals that ZrO₂ MOS capacitor has been fabricated by RF sputtering technique. The maximum refractive index has been found to be 2.29 at 400 °C. From capacitance-voltage graph, it has been observed that the memory window and accumulation capacitance has been found to be maximum at 400 °C. The maximum memory window and accumulation capacitance has been found to be 0.50 V and 7.00 ×10⁻¹¹ F, respectively. The flat band voltage shifts toward positive side at all temperatures. From current-voltage curve, it has been observed that the leakage current is found to be low at 400 °C and it is order of 10 ^{− 7}A at +20 V.

摘要

目前的研究表明，ZrO ₂ MOS 电容器已通过射频溅射技术制造。已发现最大折射率在 400 °C 时为 2.29。从电容-电压图可以看出，内存窗口和累积电容在 400 °C 时达到最大值。已发现最大存储器窗口和累积电容分别为 0.50 V 和 7.00 × 10 ^-11 F。在所有温度下，平带电压都向正侧移动。从电流-电压曲线可以看出，漏电流在 400 °C 时很低，在 +20 V 时约为 10 ^{− 7} A。