Abstract

Carbon-doped copper oxide (CuO)_{1 -x} C _x (x = 0, 0.05 and 0.1) samples were synthesized by solid state reaction method, and sintered at 850 °C for 12 h. An X-ray diffraction (XRD) result shows that the structure of the samples was monoclinic. Dielectric studies were carried for these samples in the temperature range 80 K − 300 K between the frequency range 20 Hz − 1 MHz via impedance analyzer. The permittivity and tangent loss values of the doped samples increase with increasing doping concentration. In AC conductivity study, the conductivity mechanism of the 0% and 10% carbon doped samples follows correlated barrier hopping (CBH) model and 5% carbon doped sample follows quantum mechanical tunnelling (QMT) model. The temperature-dependent conductivity curve seems to obey the Arrhenius behavior. The activation energy values have been calculated from the frequency-dependent conductivity curves. The cole–cole plot shows the formation of grain and grain boundary in the samples.

摘要

碳掺杂氧化铜 ( CuO) _{1 -x} C _x ( x = 0、0.05 和 0.1) 样品通过固态反应法合成，并在 850 °C 下烧结 12 小时。X射线衍射(XRD)结果表明样品的结构为单斜晶系。通过阻抗分析仪在 20 Hz - 1 MHz 频率范围之间的 80 K - 300 K 温度范围内对这些样品进行了介电研究。掺杂样品的介电常数和切线损耗值随着掺杂浓度的增加而增加。在交流电导率研究中，0% 和 10% 碳掺杂样品的导电机制遵循相关势垒跳跃 (CBH) 模型，5% 碳掺杂样品遵循量子力学隧穿 (QMT) 模型。随温度变化的电导率曲线似乎服从 Arrhenius 行为。活化能值是根据频率相关的电导率曲线计算出来的。cole-cole 图显示了样品中晶粒和晶界的形成。