当前位置：
X-MOL 学术
›
Phys. Status Solidi A
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
In Situ Observation of Pressurized Microcrack Growth in Silicon
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-07-22 , DOI: 10.1002/pssa.202100219 Lucas Colonel 1 , Frédéric Mazen 1 , Didier Landru 2 , Oleg Kononchuk 2 , Nadia Ben Mohamed 2 , François Rieutord 3
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-07-22 , DOI: 10.1002/pssa.202100219 Lucas Colonel 1 , Frédéric Mazen 1 , Didier Landru 2 , Oleg Kononchuk 2 , Nadia Ben Mohamed 2 , François Rieutord 3
Affiliation
|
The evolution of micrometer-scale cracks in hydrogen- and helium-implanted silicon during isothermal annealing is studied using confocal IR microscopy. Herein, it is demonstrated that the dominant mechanism of microcrack growth is crack coalescence. The coalescence of two cracks causes a sudden crack opening in silicon and leads to the formation of a larger crack. The surface of this large crack is equal to the sum of the surface areas of the two former cracks plus the opened zone. As a result, it has a less circular shape than both initial cracks. After the coalescence, the new pressurized crack surface evolves quickly and its shape circularizes again. Before their coalescence, the measurement of the distance between two microcracks reveals the increase of the gap closure velocity as two microcracks come closer due to the interaction of their stress fields. In addition, the growth of isolated cracks without coalescence due to implanted gas diffusion and crack front curvature effect on stress is detected. It is evidenced that two geometric parameters, the distance between neighboring cracks and the local curvature of the crack front, contribute to the growth of a pressurized crack.
中文翻译：
硅中加压微裂纹生长的原位观察
使用共焦红外显微镜研究了等温退火过程中注入氢和氦的硅中微米级裂纹的演变。在这里，证明了微裂纹扩展的主要机制是裂纹聚结。两个裂纹的合并导致硅中的裂纹突然打开并导致形成更大的裂纹。这个大裂缝的表面积等于前两个裂缝的表面积加上开口区的总和。因此，它的圆形形状比两个初始裂纹都要小。聚结后，新的受压裂纹面迅速演化，形状再次圆化。在他们结合之前，两个微裂纹之间距离的测量表明，随着两个微裂纹由于应力场的相互作用而靠近时，间隙闭合速度会增加。此外，由于注入的气体扩散和裂纹前缘曲率对应力的影响，检测到没有聚结的孤立裂纹的生长。有证据表明，相邻裂纹之间的距离和裂纹前沿的局部曲率这两个几何参数有助于加压裂纹的生长。
更新日期：2021-07-22
中文翻译：
硅中加压微裂纹生长的原位观察
使用共焦红外显微镜研究了等温退火过程中注入氢和氦的硅中微米级裂纹的演变。在这里，证明了微裂纹扩展的主要机制是裂纹聚结。两个裂纹的合并导致硅中的裂纹突然打开并导致形成更大的裂纹。这个大裂缝的表面积等于前两个裂缝的表面积加上开口区的总和。因此，它的圆形形状比两个初始裂纹都要小。聚结后，新的受压裂纹面迅速演化，形状再次圆化。在他们结合之前，两个微裂纹之间距离的测量表明，随着两个微裂纹由于应力场的相互作用而靠近时，间隙闭合速度会增加。此外，由于注入的气体扩散和裂纹前缘曲率对应力的影响，检测到没有聚结的孤立裂纹的生长。有证据表明，相邻裂纹之间的距离和裂纹前沿的局部曲率这两个几何参数有助于加压裂纹的生长。
京公网安备 11010802027423号