Silicon nitride (Si₃N₄) ceramics were fabricated by gas pressure sintering (GPS) using four sintering additives: Y₂O₃–MgO, Y₂O₃–MgF₂, YF₃–MgO, and YF₃–MgF₂. The phase composition, grain growth kinetics, mechanical properties, and thermal conductivities of the Si₃N₄ ceramics were compared. The results indicated that the reduction of YF₃ on SiO₂, induced a high Y₂O₃/SiO₂ secondary phase ratio, which improved the thermal conductivity of the Si₃N₄ ceramics. The depolymerization of F atom reduces the diffusion energy barrier of solute atom and weakens the viscous resistance of anion group, which was beneficial to grain boundary migration. Besides exhibiting a lower grain growth exponent(n = 2.5)and growth activation energy (Q = 587.94 ± 15.35 kJ/mol), samples doped with binary fluorides showed excellent properties, including appreciable thermal conductivity (69 W m⁻¹ K⁻¹), hardness (14.63 ± 0.12 GPa), and fracture toughness (8.75 ± 0.18 MPa m^1/2), as well as desirable bending strength (751 ± 14 MPa).

氮化硅 (Si ₃ N ₄ ) 陶瓷是通过气压烧结 (GPS) 使用四种烧结添加剂制造的：Y ₂ O ₃ -MgO、Y ₂ O ₃ -MgF ₂、YF ₃ -MgO 和 YF ₃ -MgF ₂。比较了Si ₃ N ₄陶瓷的相组成、晶粒生长动力学、机械性能和热导率。结果表明，YF ₃在SiO ₂上的还原，诱导了高Y ₂ O ₃ /SiO ₂次相比，提高了Si ₃ N ₄陶瓷的热导率。F原子的解聚降低了溶质原子的扩散能垒，减弱了阴离子基团的粘滞阻力，有利于晶界迁移。除了表现出较低的晶粒生长指数 ( n = 2.5) 和生长活化能 ( Q = 587.94 ± 15.35 kJ/mol)，掺杂二元氟化物的样品还表现出优异的性能，包括可观的热导率 (69 W m ^-1 K ^-1 ) 、硬度 (14.63 ± 0.12 GPa) 和断裂韧性 (8.75 ± 0.18 MPa m ^1/2 )，以及理想的弯曲强度 (751 ± 14 MPa)。