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Performance Limitations of Wide-Gap (Ag,Cu)(In,Ga)Se2 Thin-Film Solar Cells
Solar RRL ( IF 6.0 ) Pub Date : 2021-07-20 , DOI: 10.1002/solr.202100403 Jan Keller 1 , Patrick Pearson 1 , Nina Shariati Nilsson 1 , Olof Stolt 1 , Lars Stolt 1 , Marika Edoff 1
Solar RRL ( IF 6.0 ) Pub Date : 2021-07-20 , DOI: 10.1002/solr.202100403 Jan Keller 1 , Patrick Pearson 1 , Nina Shariati Nilsson 1 , Olof Stolt 1 , Lars Stolt 1 , Marika Edoff 1
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The effect of absorber stoichiometry in (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cells with bandgaps (Eg) > 1.40 eV is studied on a large sample set. It is confirmed that moving away in composition from ternary AgGaSe2 by simultaneous reduction in Ga and Ag content widens the chalcopyrite single-phase region and thereby reduces the amount of ordered vacancy compounds (OVCs). As a consequence, a distortion in current−voltage characteristics, ascribed to OVCs at the back contact, can be successfully avoided. A clear anticorrelation between open-circuit voltage (VOC) and short-circuit current density (JSC) is detected with varying absorber stoichiometry, showing decreasing VOC and increasing JSC values for [I]/[III] > 0.9. Capacitance profiling reveals that the absorber doping gradually decreases toward stoichiometric composition, eventually leading to complete depletion. It is observed that only such fully depleted samples exhibit perfect carrier collection, evidencing a very low diffusion length in wide-gap ACIGS films. The results indicate that OVCs at the surface play a minor or passive role for device performance. Finally, a solar cell with VOC = 0.916 V at Eg = 1.46 eV is measured, which is, to the best of our knowledge, the highest value reported for this bandgap to date.
中文翻译：
宽间隙 (Ag,Cu)(In,Ga)Se2 薄膜太阳能电池的性能限制
在大样本集上研究了带隙 ( E g ) > 1.40 eV 的(Ag,Cu)(In,Ga)Se 2 (ACIGS) 太阳能电池中吸收剂化学计量的影响。已证实，通过同时减少 Ga 和 Ag 含量而使组成远离三元 AgGaSe 2 会拓宽黄铜矿单相区域，从而减少有序空位化合物 (OVC) 的数量。因此，可以成功避免归因于背触点 OVC 的电流-电压特性失真。随着吸收剂化学计量的变化，检测到开路电压 ( V OC ) 和短路电流密度 ( J SC )之间的明显反相关性，显示出降低[I]/[III] > 0.9 的V OC和增加的J SC值。电容分析表明，吸收剂掺杂逐渐减少到化学计量组成，最终导致完全耗尽。据观察，只有这种完全耗尽的样品才表现出完美的载流子收集，证明在宽间隙 ACIGS 薄膜中扩散长度非常低。结果表明，表面的 OVC 对设备性能起着次要或被动的作用。最后， 测量 了E g = 1.46 eV时V OC = 0.916 V的太阳能电池，据我们所知，这是迄今为止该带隙报告的最高值。
更新日期：2021-09-09
中文翻译：
宽间隙 (Ag,Cu)(In,Ga)Se2 薄膜太阳能电池的性能限制
在大样本集上研究了带隙 ( E g ) > 1.40 eV 的(Ag,Cu)(In,Ga)Se 2 (ACIGS) 太阳能电池中吸收剂化学计量的影响。已证实，通过同时减少 Ga 和 Ag 含量而使组成远离三元 AgGaSe 2 会拓宽黄铜矿单相区域，从而减少有序空位化合物 (OVC) 的数量。因此，可以成功避免归因于背触点 OVC 的电流-电压特性失真。随着吸收剂化学计量的变化，检测到开路电压 ( V OC ) 和短路电流密度 ( J SC )之间的明显反相关性，显示出降低[I]/[III] > 0.9 的V OC和增加的J SC值。电容分析表明，吸收剂掺杂逐渐减少到化学计量组成，最终导致完全耗尽。据观察，只有这种完全耗尽的样品才表现出完美的载流子收集，证明在宽间隙 ACIGS 薄膜中扩散长度非常低。结果表明，表面的 OVC 对设备性能起着次要或被动的作用。最后， 测量 了E g = 1.46 eV时V OC = 0.916 V的太阳能电池，据我们所知，这是迄今为止该带隙报告的最高值。
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