Effect of Hole Effective Mass and Carrier Concentration on the Conductivity of a Transparent p-Type LaCuOS Semiconductor with Good Transmittance in Both Visible and Mid-Infrared Ranges,Physica Status Solidi-Rapid Research Letters

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Effect of Hole Effective Mass and Carrier Concentration on the Conductivity of a Transparent p-Type LaCuOS Semiconductor with Good Transmittance in Both Visible and Mid-Infrared Ranges
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-07-21 , DOI: 10.1002/pssr.202100273
Gang Gao ₁ , Lijia Tong ₂ , Lei Yang ₃ , Chunqiang Sun ₁ , Liangge Xu ₁ , Zhenhuai Yang ₄ , Peng Wang ₁ , Fangjuan Geng ₁ , Fei Xia ₁ , Hao Gong ₅ , Jiaqi Zhu _{1,

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Affiliation

The development of advanced transparent electrical devices has created an urgent demand for wide-bandgap transparent semiconductors. Herein, a simple, low-cost ink-based method for preparation of LaCuOS is introduced. High transmittances of above 60% and 65% at visible (380–750 nm) and mid-infrared (3–5 μm) wavelengths, respectively, are obtained with LaCuOS films prepared using this ink. With these films, the carrier concentration is above 10¹⁸ cm⁻³, while a conductivity of 5 S cm⁻¹ is obtained, electrical properties that are both higher than those of most transparent p-type semiconductors. From density functional theory calculations, it is surmised that the improved conductivity of the LaCuOS is a result of its high carrier concentration, and its hole effective mass, which is smaller than that of typical transparent p-type semiconductors.

中文翻译：

空穴有效质量和载流子浓度对在可见光和中红外范围内具有良好透射率的透明 p 型 LaCuOS 半导体电导率的影响

先进透明电子器件的发展催生了对宽带隙透明半导体的迫切需求。在此，介绍了一种简单、低成本的基于墨水的 LaCuOS 制备方法。使用这种墨水制备的 LaCuOS 薄膜分别在可见光 (380–750 nm) 和中红外 (3–5 μm) 波长下获得了高于 60% 和 65% 的高透射率。使用这些薄膜，载流子浓度高于 10 ¹⁸ cm ^-3，而电导率为 5 S cm ^-1获得的电性能均高于大多数透明 p 型半导体的电性能。根据密度泛函理论计算，推测 LaCuOS 的导电性提高是由于其高载流子浓度和比典型透明 p 型半导体更小的空穴有效质量。

更新日期：2021-07-21

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