Purpose

The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED).

Design/methodology/approach

InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition.

Findings

The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824.

Originality/value

This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

中文翻译：

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高生长温度下InGaN量子阱V/III比对近紫外发光二极管的影响

目的

本文的目的是研究氮化铟镓 (InGaN) 量子阱 (QW) 的 V/III 比对近紫外发光二极管 (NUV-LED) 的结构、光学和电学性能的影响。

设计/方法/方法

使用金属有机化学气相沉积在大气压下成功地在 c 面图案化蓝宝石衬底上生长基于 InGaN 的 NUV-LED。

发现

根据高分辨率 X 射线衍射，随着 V/III 比从 20871 增加到 11824，InGaN QW 的铟成分和厚度增加。还发现 V/III 比对 InGaN QW 的表面形态有重要影响，因此对后续层的表面形态有重要影响。除此之外，电致发光测量显示 V/III 比对 NUV-LED 的光输出功率 (LOP) 和发射峰值波长有重大影响。LOP 在 100 mA 时增加了 53%，随着 V/III 比从 20871 降低到 11824，NUV-LED 的发射峰值波长变为更长的波长。

原创性/价值

该研究发现了 V/III 比与 QW 特性之间的关系，从而导致 NUV-LED 的 LOP 增强。产生低 V/III 比的高 TMIn 流速有助于增加 NUV-LED 的 LOP。