Thermal Sensitivity of Microwave Pseudomorphic High-Electron-Mobility Transistor Performance: Pre and Post Multilayer Technology,Physica Status Solidi (A) - Applications and Materials Science

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Thermal Sensitivity of Microwave Pseudomorphic High-Electron-Mobility Transistor Performance: Pre and Post Multilayer Technology
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-07-20 , DOI: 10.1002/pssa.202100290
Mohammad A. Alim ₁ , Jannatul Naima ₁ , Ali A. Rezazadeh ₂

Affiliation

Herein, the temperature dependence of direct current (DC) and scattering parameters of GaAs pseudomorphic high-electron-mobility transistors (pHEMTs) before and after back-end-of-line process (multilayer technology) by evaluating corresponding equivalent-circuit models is reported on. The change of the relative sensitivity of the microwave performance with ambient temperature is evaluated using scattering parameter measurements and the corresponding equivalent-circuit models. The devices studied are two pHEMTs with the same 200 μm gate width but manufactured using pre- and post-multilayer technology. The investigation is conducted under both cooled and heated conditions, through temperature variations from −25 to 125 °C. Although the thermal impact highly depends on the selected operating condition, the bias point is chosen to allow for a fair comparison between the transistor fabricated before and after multilayer technologies to the maximum. Similar patterns of thermal sensitivities are observed for the pre and post multilayer-manufactured devices but in the case of the multilayer device, the temperature effect is more pronounced.

中文翻译：

微波伪晶高电子迁移率晶体管性能的热敏性：前后多层技术

在此，通过评估相应的等效电路模型，报告了在后端工艺（多层技术）前后 GaAs 假晶高电子迁移率晶体管（pHEMT）的直流电流（DC）和散射参数的温度依赖性在。使用散射参数测量和相应的等效电路模型来评估微波性能的相对灵敏度随环境温度的变化。研究的器件是两个 pHEMT，具有相同的 200 μm 栅极宽度，但使用前多层和后多层技术制造。研究在冷却和加热条件下进行，温度从 -25 到 125 °C 变化。尽管热影响很大程度上取决于所选的操作条件，选择偏置点是为了最大程度地公平比较多层技术之前和之后制造的晶体管。对于多层制造前后的器件，观察到类似的热敏感性模式，但在多层器件的情况下，温度效应更为明显。

更新日期：2021-09-27

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