Negative and positive muon-induced single-event upsets (SEUs) are studied in 20-nm bulk planar SRAMs. Muon irradiation is performed using a mono-energetic source with varying the muon energy. The energy dependence of the cross sections (CSs) of SEUs and multiple-cell upsets (MCUs) shows the significant contribution of muon capture reactions for the negative muon, as reported in previous studies. Interestingly, MCU events are found for the positive muon, in contrast to the previous studies. The CSs for the negative and positive muons are compared with that for the other terrestrial radiations: high-energy neutrons, thermal neutrons, and alpha particles. The voltage dependence of the SEU CS, together with the empirical model for charge collection, demonstrates the difference in the contributing secondary ions among the negative muon, the high-energy neutron, and the thermal neutron. The MCU events are thoroughly analyzed in terms of their ratio to the total events and their fail bit patterns. The results reveal that the MCU characteristics for the negative muon are different from that for the other terrestrial radiations due to the muon capture reactions, where parasitic bipolar effects and the isotropic emission of secondary ions are important factors.

中文翻译：

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20 nm SRAM 中 μ 子诱发的单粒子扰乱：中子和 Alpha 粒子的比较表征


在 20 nm 体平面 SRAM 中研究了负和正 μ 介子引起的单粒子翻转 (SEU)。 μ子辐照是使用具有不同μ子能量的单能源进行的。正如之前的研究报道，SEU 的横截面 (CS) 和多细胞翻转 (MCU) 的能量依赖性表明 μ 子捕获反应对负 μ 子的显着贡献。有趣的是，与之前的研究相比，MCU 事件被发现为正 μ 子。将负μ子和正μ子的CS与其他地面辐射的CS进行比较：高能中子、热中子和α粒子。 SEU CS 的电压依赖性以及电荷收集的经验模型证明了负 μ 子、高能中子和热中子之间贡献的二次离子的差异。 MCU 事件根据其与总事件的比率及其失败位模式进行彻底分析。结果表明，由于μ子捕获反应，负μ子的MCU特性与其他地面辐射的MCU特性不同，其中寄生双极效应和二次离子的各向同性发射是重要因素。