The electrode in the waste capacitor and capacitor producing semiconductor industry produces a significant amount of tantalum-bearing e-wastes. The lack of proficient technology poses a significant challenge for valorization and the circular economy of tantalum-bearing waste. Currently, we are developing a process for the purification and recovery of metal values from such waste through a combination of hydrometallurgy and pyrometallurgy techniques. In our present investigation, the initiative for the study includes an understanding of rudimentary thermochemistry and thermal characterization of semiconductor industry tantalum scrap for possible pretreatment. Also includes identification of suitable pretreatment conditions for feasible oxidation of semiconductor industry tantalum scrap to generate leachable tantalum oxide. Followed by the possibility for leaching has been investigated through the Pourbaix diagram and selected case studies. Our leaching investigation reasonably indicated that tantalum nitride in the semiconductor industry tantalum scrap can efficiently be oxidized using Na₂CO₃ (1:1 weight ratio) at 500 °C and roasting time of 3 h. Then Ta leaching using concentrated HF and H₂SO₄ at 50:50 wt% ratio as a lixiviant can be achieved efficiently. As the roasting and leaching process is feasible and scalable, Ta can be successfully extracted from the semiconductor industry tantalum scrap on an industrial scale.

废电容器和电容器生产半导体行业中的电极会产生大量含钽电子废物。缺乏熟练的技术对含钽废物的增值和循环经济构成了重大挑战。目前，我们正在开发一种工艺，通过湿法冶金和火法冶金技术的结合，从此类废物中提纯和回收有价金属。在我们目前的调查中，该研究的倡议包括了解半导体工业钽废料的基本热化学和热特性，以进行可能的预处理。还包括确定合适的预处理条件，以便对半导体工业钽废料进行可行的氧化，以生成可浸出的氧化钽。其次是通过普贝图和选定的案例研究调查了浸出的可能性。我们的浸出调查合理地表明，使用 Na 可以有效地氧化半导体工业钽废料中的氮化钽₂ CO ₃ (1:1 重量比) 在 500 °C 和 3 小时的焙烧时间。然后使用浓HF和H ₂ SO ₄以50:50wt%的比例作为浸出剂可以有效地实现Ta浸出。由于焙烧和浸出工艺可行且具有可扩展性，因此可以在工业规模上成功地从半导体工业钽废料中提取钽。