In this work, the electronic structure and the inter-subband absorption coefficient (IAC) are theoretically studied for symmetric double n-type δ-doped GaAs quantum well considering the donor impurity atom effect. The electron states are determined by a diagonalization procedure, working within the effective mass and parabolic band approximations, and the effect of donor center is treated via the variational method. Meanwhile, linear and nonlinear contributions for the inter-subband absorption coefficient were evaluated from expressions usually derived within the perturbative solution of the Von Neumann equation for density matrix. We report the impurity binding energy by considering a donor atom located at the center of the system (at z_i = 0). We found that the reported physical properties become more sensitive to the inter-well separation distance L_w than to the δ-doping density, N_2d. In the former case the total optical absorption coefficient undergoes an important red-shift as well as a significant decrease in its magnitude. When N_2d values increase, the binding energy exhibits a contrary effect, and the total optical absorption coefficient exhibits an small blue-shift with no significant changes in its magnitude. The presence of the donor impurity atom in the system represents one factor that can modify the location of inter-subband absorption coefficient, by inducing a blue-shift of the optical response. The resonant peak energies are within the range of several terahertz, showing potential device applications within this range of the electromagnetic spectrum.

在这项工作中，考虑到施主杂质原子效应，对对称双n型δ掺杂GaAs量子阱的电子结构和子带间吸收系数（IAC）进行了理论研究。电子状态由对角化程序确定，在有效质量和抛物线带近似内工作，并且通过变分方法处理施主中心的影响。同时，子带间吸收系数的线性和非线性贡献通过通常在密度矩阵的冯诺依曼方程的微扰解中导出的表达式来评估。我们通过考虑位于系统中心（在z _i处）的供体原子来报告杂质结合能 = 0）。我们发现所报告的物理特性对井间间隔距离L _w变得比对δ掺杂密度N _{2 d}更敏感。在前一种情况下，总光吸收系数会发生重要的红移，并且其幅度显着降低。当N _{2 d}值增加，结合能表现出相反的效果，总光吸收系数表现出小的蓝移，其幅度没有显着变化。系统中供体杂质原子的存在代表了一种可以通过引起光响应蓝移来修改子带间吸收系数位置的因素。共振峰值能量在几个太赫兹的范围内，显示了在这个电磁频谱范围内的潜在设备应用。