The measurements of the phonon spectrum of a LED heterostructure based on the In_0.12Ga_0.88N/GaN barrier showed the presence of four phonon radiation peaks with energies of 0.193, 0.207, 0.353, and 0.356 eV. It was assumed from the comparison of the calculation results of energy spectra of the electron and hole quantum wells with the obtained experimental data that these peaks can be interpreted as the energies of phonons generated during the capture of electrons from the barrier layer to the second level of dimensional quantization, as well as during the relaxation of electrons from the second level to the radiation level and trapping of holes to the upper level of the quantum well.

基于 In _0.12 Ga _0.88 N/GaN 势垒的 LED 异质结构的声子光谱测量表明存在四个声子辐射峰，能量分别为 0.193、0.207、0.353 和 0.356 eV。将电子和空穴量子阱的能谱计算结果与得到的实验数据进行比较，推测这些峰可以解释为电子从势垒层捕获到第二能级过程中产生的声子能量。维度量子化，以及在电子从第二能级弛豫到辐射能级和将空穴捕获到量子阱的上能级期间。