In this work, polycrystalline silicon (poly-Si) thin films were synthesized using Au-induced crystallization of amorphous silicon suboxide for the first time. The structure and elemental composition of the substrate/Au/a-SiO_0.4 stacked structure annealed at 500–700°C were investigated by transmission electron microscopy (TEM), Raman, and energy-dispersive X-ray spectroscopy (EDX). TEM and Raman methods confirmed the formation of a poly-Si thin film in the bottom layer (on the substrate) as a result of annealing. At the same time, TEM and EDX studies showed the formation of a thin (barrier) SiO₂ layer with a thickness of ~5 nm located between the poly-Si thin film and the upper layer consisting of Au, Si, and O. Based on the results, a mechanism for the growth of poly-Si thin films is proposed which has features (dewetting of Au films and formation of a barrier SiO₂ layer) that are not characteristic of the well-known layer exchange process.

在这项工作中，首次使用非晶低氧化硅的 Au 诱导结晶合成了多晶硅 (poly-Si) 薄膜。通过透射电子显微镜 (TEM)、拉曼和能量色散 X 射线光谱 (EDX) 研究了在 500–700°C 下退火的衬底/Au/a-SiO _0.4堆叠结构的结构和元素组成。TEM 和拉曼方法证实，由于退火，在底层（衬底上）形成了多晶硅薄膜。同时，TEM 和 EDX 研究表明形成了薄（势垒）SiO ₂厚度约为 5 nm 的层位于多晶硅薄膜和由 Au、Si 和 O 组成的上层之间。 基于结果，提出了一种多晶硅薄膜的生长机制，其具有特征（Au 膜的去湿和阻挡 SiO ₂层的形成）不是众所周知的层交换过程的特征。