Abstract—

CdSe layers having high photosensitivity (photocurrent to dark current ratio of 6.2 × 10⁴) and an extremely low carrier concentration (9 × 10¹¹ cm^–3) have been grown on muscovite mica by thermal evaporation in a quasi-closed system. These results are of interest for producing materials for position-sensitive semiconductor photodetectors based on CdSe layers. We have demonstrated that the 78-K cathodoluminescence spectra of the cadmium selenide layers grown at 853 K have a single line, corresponding to radiative annihilation of free A-excitons. The spectra of the layers grown at 833 K show a line of free A-excitons and its first phonon replica.

中文翻译：

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在准封闭系统中在云母上生长的光敏 CdSe 层的激子发光光谱和电传输特性

摘要-

具有高光敏性（光电流与暗电流之比为 6.2 × 10 ⁴）和极低载流子浓度（9 × 10 ¹¹ cm ^-3）的CdSe 层已通过热蒸发在准封闭系统中生长在白云母上。这些结果对于生产用于基于 CdSe 层的位置敏感半导体光电探测器的材料很有意义。我们已经证明，在 853 K 下生长的硒化镉层的 78-K 阴极发光光谱有一条单线，对应于自由A激子的辐射湮灭。在 833 K 生长的层的光谱显示了一条自由A -激子及其第一个声子复制品。