Abstract—

We have studied the properties of KDB-5 silicon diffusion-doped with manganese in the temperature range 1100–1300°C. The results demonstrate that raising the diffusion temperature in the range 1175–1300°C leads to a decrease in the concentration of electrically active manganese atoms, so that at t = 1300°C their concentration becomes considerably lower than the initial boron dopant concentration. One possible reason for this is the formation of electrically neutral quasi-molecular complexes of oxygen and manganese atoms located on neighboring sites. The formation of electrically neutral complexes is accompanied by the formation of new tetrahedral cells of the Si₂OMn type in the silicon lattice, which only slightly distort its periodicity but differ significantly in properties from the unit cell of silicon. They have ionic–covalent bonding and a different electron binding energy. Increasing the concentration of such tetrahedral cells can lead to the formation of their combinations, to the point of the formation of nanocrystals of a new phase, which will have its own fundamental parameters.

中文翻译：

---

高温扩散掺杂锰的硅的电学特性

摘要-

我们研究了 KDB-5 硅扩散掺杂锰在 1100-1300°C 温度范围内的特性。结果表明，在 1175-1300°C 范围内提高扩散温度会导致电活性锰原子的浓度降低，因此在t = 1300°C 时，它们的浓度变得远低于初始硼掺杂浓度。造成这种情况的一个可能原因是在邻近位置形成了氧和锰原子的电中性准分子复合物。电中性配合物的形成伴随着 Si ₂的新四面体单元的形成硅晶格中的 OMn 型，仅略微扭曲其周期性，但在性质上与硅晶胞明显不同。它们具有离子-共价键和不同的电子结合能。增加这种四面体细胞的浓度可以导致它们的组合的形成，达到形成新相纳米晶体的程度，这将具有自己的基本参数。