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Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-07-19 , DOI: 10.35848/1882-0786/ac1230
Matthew S. Wong 1 , Joonho Back 2 , David Hwang 1 , Changmin Lee 1 , Jianfeng Wang 1 , Srinivas Gandrothula 1 , Tal Margalith 1 , James S. Speck 1 , Shuji Nakamura 1, 2 , Steven P. DenBaars 1, 2
Affiliation  

High wall-plug efficiency (WPE) micro-light-emitting diodes with metalorganic chemical vapor deposition-grown tunnel junction (TJ) contacts are demonstrated. By employing chemical treatments before sidewall activation, the 20נ20 μm2 TJ devices resulted in a voltage penalty of 0.2V at 20Acm−2, compared to devices with indium-tin oxide (ITO) contacts. Moreover, the enhancement in light output power was more than 40% higher than ITO devices. Hence, the TJ devices yielded the peak external quantum efficiency (EQE) and WPE of 56% and 55%, respectively, indicating the improvements of 64% and 77% in peak EQE and WPE compared to ITO devices.



中文翻译:

使用化学处理证明具有 MOCVD 生长隧道结触点的高壁插效率 III 族氮化物微型发光二极管

展示了具有金属有机化学气相沉积生长隧道结 (TJ) 触点的高壁插效率 (WPE) 微型发光二极管。通过在侧壁激活之前采用化学处理,与具有氧化铟锡 (ITO) 触点的器件相比,20 נ20 μ m 2 TJ 器件在 20Acm -2 下导致 0.2V 的电压损失。此外,光输出功率的增强比 ITO 器件高 40% 以上。因此,TJ 器件的峰值外量子效率 (EQE) 和 WPE 分别为 56% 和 55%,表明与 ITO 器件相比,峰值 EQE 和 WPE 提高了 64% 和 77%。

更新日期:2021-07-19
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