High wall-plug efficiency (WPE) micro-light-emitting diodes with metalorganic chemical vapor deposition-grown tunnel junction (TJ) contacts are demonstrated. By employing chemical treatments before sidewall activation, the 20נ20 μm² TJ devices resulted in a voltage penalty of 0.2V at 20Acm⁻², compared to devices with indium-tin oxide (ITO) contacts. Moreover, the enhancement in light output power was more than 40% higher than ITO devices. Hence, the TJ devices yielded the peak external quantum efficiency (EQE) and WPE of 56% and 55%, respectively, indicating the improvements of 64% and 77% in peak EQE and WPE compared to ITO devices.

展示了具有金属有机化学气相沉积生长隧道结 (TJ) 触点的高壁插效率 (WPE) 微型发光二极管。通过在侧壁激活之前采用化学处理，与具有氧化铟锡 (ITO) 触点的器件相比，20 נ20 μ m ² TJ 器件在 20Acm ^{-2 下}导致 0.2V 的电压损失。此外，光输出功率的增强比 ITO 器件高 40% 以上。因此，TJ 器件的峰值外量子效率 (EQE) 和 WPE 分别为 56% 和 55%，表明与 ITO 器件相比，峰值 EQE 和 WPE 提高了 64% 和 77%。