We report the structural and magnetic properties of Fe-doped InAs quantum dots (QDs) grown on GaAs (001) substrates by molecular beam epitaxy. The size and distribution of the QDs are revealed by atomic force microscopy and characterized by scanning tunnelling electron microscopy, which confirms zinc-blende crystal structure. Magnetometry measurements show the presence of ferromagnetism in the QDs and a very high Curie temperature (>300K). Magnetic circular dichroism spectra of these QDs exhibit a single peak at 900–1000nm. These results suggest that the Fe-doped InAs QDs are promising for spintronics device applications such as spin-light emitting diodes operating at room temparture.

我们报告了通过分子束外延在 GaAs (001) 衬底上生长的 Fe 掺杂 InAs 量子点 (QD) 的结构和磁性特性。量子点的大小和分布通过原子力显微镜显示，并通过扫描隧道电子显微镜进行表征，这证实了闪锌矿晶体结构。磁力测量显示 QD 中存在铁磁性和非常高的居里温度 (>300K)。这些 QD 的磁性圆二色性光谱在 900-1000nm 处呈现单峰。这些结果表明，Fe 掺杂的 InAs QD 有望用于自旋电子器件应用，例如在室温下工作的自旋发光二极管。