In the contemporary era of Internet-of-Things (IoT), there is an extensive search for competent devices which can operate at ultralow voltage supply. Due to the restriction of power dissipation, a reduced sub-threshold swing-based device appears to be the perfect solution for efficient computation. To counteract this issue, negative capacitance fin field-effect transistors (NC-FinFETs) came up as the next-generation platform to withstand the aggressive scaling of transistors. The ease of fabrication, process-integration, higher current driving capability, and ability to tailor the short-channel effects (SCEs) are some of the potential advantages offered by NC-FinFETs that attracted the attention of researchers worldwide. The following review emphasizes how this new state-of-art technology supports the persistence of Moore's law and addresses the ultimate limitation of Boltzmann tyranny by offering a sub-threshold slope (SS) below 60 mV/decade. The article primarily focuses on two parts: 1) the theoretical background of negative capacitance (NC) effect and FinFET devices and 2) the recent progress done in the field of NC-FinFETs. It also highlights the crucial areas that need to be upgraded, to mitigate the challenges faced by this technology and the future prospects of such devices.

中文翻译：

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用于低功耗应用的负电容 FinFET 的最新进展：综述。

在当今物联网 (IoT) 时代，人们广泛寻找能够在超低电压电源下运行的合格设备。由于功率耗散的限制，基于降低的亚阈值摆动的设备似乎是高效计算的完美解决方案。为了解决这个问题，负电容鳍式场效应晶体管 (NC-FinFET) 作为下一代平台出现，以承受晶体管的激进缩放。易于制造、工艺集成、更高的电流驱动能力以及定制短沟道效应 (SCE) 的能力是 NC-FinFET 提供的一些潜在优势，引起了全世界研究人员的关注。以下评论强调了这种新的最先进技术如何支持摩尔的持久性 s 定律并通过提供低于 60 mV/decade 的亚阈值斜率 (SS) 来解决玻尔兹曼暴政的最终限制。文章主要关注两个部分：1）负电容（NC）效应和FinFET器件的理论背景；2）NC-FinFETs领域的最新进展。它还强调了需要升级的关键领域，以减轻该技术面临的挑战以及此类设备的未来前景。