As third-generation semiconductors, group-III nitrides are promising for high power electronic and optoelectronic devices because of their wide bandgap, high electron saturation mobility, and other unique properties. Inspired by the thickness-dependent properties of two-dimensional (2D) materials represented by graphene, it is predicted that the 2D counterparts of group-III nitrides would have similar properties. However, the preparation of 2D group-III nitride-based materials and devices is limited by the large lattice mismatch in heteroepitaxy and the low rate of lateral migration, as well as the unsaturated dangling bonds on the surfaces of group-III nitrides. The present review focuses on theoretical and experimental studies on 2D group-III nitride materials and devices. Various properties of 2D group-III nitrides determined using simulations and theoretical calculations are outlined. Moreover, the breakthroughs in their synthesis methods and their underlying physical mechanisms are detailed. Furthermore, devices based on 2D group-III nitrides are discussed accordingly. Based on recent progress, the prospect for the further development of the 2D group-III nitride materials and devices is speculated. This review provides a comprehensive understanding of 2D group-III nitride materials, aiming to promote the further development of the related fields of nano-electronic and nano-optoelectronics.

作为第三代半导体，III 族氮化物由于其宽带隙、高电子饱和迁移率和其他独特的特性，有望用于大功率电子和光电器件。受以石墨烯为代表的二维 (2D) 材料的厚度相关特性的启发，预计 III 族氮化物的二维对应物将具有相似的特性。然而，二维III族氮化物基材料和器件的制备受到异质外延大晶格失配和横向迁移率低以及III族氮化物表面不饱和悬挂键的限制。本综述侧重于二维 III 族氮化物材料和器件的理论和实验研究。概述了使用模拟和理论计算确定的二维 III 族氮化物的各种特性。此外，详细介绍了其合成方法及其潜在物理机制的突破。此外，相应地讨论了基于二维 III 族氮化物的器件。基于最近的进展，推测二维III族氮化物材料和器件的进一步发展前景。这篇综述提供了对二维III族氮化物材料的全面了解，旨在促进纳米电子和纳米光电子相关领域的进一步发展。相应地讨论了基于二维 III 族氮化物的器件。基于最近的进展，推测二维III族氮化物材料和器件的进一步发展前景。这篇综述提供了对二维III族氮化物材料的全面了解，旨在促进纳米电子和纳米光电子相关领域的进一步发展。相应地讨论了基于二维 III 族氮化物的器件。基于最近的进展，推测二维III族氮化物材料和器件的进一步发展前景。这篇综述提供了对二维III族氮化物材料的全面了解，旨在促进纳米电子和纳米光电子相关领域的进一步发展。