Abstract

Cu₂ZnSnSe₄ (CZTSe) based solar cells, containing abundant elements, with Ag alloying have recently reached efficiency of 10.2%. The open circuit voltage in CZTSe devices is believed to be limited, in between other factors, by strong band tailing caused by an exceptionally high density of Cu/Zn antisites. By replacing Cu in CZTSe with Ag, whose covalent radius is 15% larger than that of Cu and Zn, the density of I–II antisite defects (e.g., Cu–Zn disorder) is predicted to drop. In the present work, (Ag_xCu_1 – x)₂ZnSnS₄ (ACZTS) heterostructures in three different architectures were investigated. The 5 and 10% silver substituted CZTS absorber layers were obtained by low-cost spray pyrolysis technique, as well as three different methods for the CdS layer deposition were tested in order to optimize the ACZTS heterostructure efficiency.

中文翻译：

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(AgxCu1 – x)2ZnSnS4 基薄膜异质结：CdS 沉积方法的影响

摘要

Cu ₂ ZnSnSe ₄ (CZTSe) 基太阳能电池，含有丰富的元素，Ag 合金化最近达到了 10.2% 的效率。CZTSe 器件中的开路电压被认为在其他因素之间受到由异常高密度的 Cu/Zn 反位点引起的强带拖尾的限制。通过用Ag 代替CZTSe 中的Cu，Ag 的共价半径比Cu 和Zn 的共价半径大15%，预计I-II 反位缺陷（例如Cu-Zn 无序）的密度会下降。在目前的工作中，(Ag _x Cu _{1 –  x} ) ₂ ZnSnS ₄研究了三种不同架构中的 (ACZTS) 异质结构。通过低成本喷雾热解技术获得了 5% 和 10% 银取代的 CZTS 吸收层，并测试了三种不同的 CdS 层沉积方法，以优化 ACZTS 异质结构效率。