W-1%SiC composites are prepared by pressureless sintering method. The effects of sintering temperature on the density, microstructure evolution and mechanical properties of the materials are studied. The dynamic analysis of densification process is carried out, and the interface strengthening mechanism is deeply analyzed. The results show that the addition of SiC can improve the strength and toughness of W. The formation of amorphous SiO₂ reduces the sintering temperature on densification of the composites. When the sintering temperature is 1880 °C, the relative density and the tensile strength is 99.4%, 431 MPa respectively. On the one hand, the existence of glass phase avoids the formation of harmful interfacial reaction and reduces the possibility of microcracks; On the other hand, it promotes the wetting and bonding between the phases, which forms a dense interface layer after cooling. The formation of the new interface replaces the original weak WW interface, which enhances the interfacial bonding strength of tungsten matrix. Transmission electron microscopy (TEM) is used to directly observe the W/W₂C/SiO₂ three-phase bonding interface and the interface structure.

W-1%SiC复合材料采用无压烧结法制备。研究了烧结温度对材料密度、微观结构演变和力学性能的影响。对致密化过程进行动态分析，深入分析界面强化机理。结果表明，SiC的加入可以提高W的强度和韧性。非晶SiO ₂的形成降低复合材料致密化的烧结温度。烧结温度为1880℃时，相对密度和抗拉强度分别为99.4%、431MPa。一方面，玻璃相的存在避免了有害界面反应的形成，降低了微裂纹产生的可能性；另一方面，它促进了相之间的润湿和结合，冷却后形成致密的界面层。新界面的形成取代了原有的弱W W界面，增强了钨基体的界面结合强度。透射电子显微镜(TEM)用于直接观察W/W ₂ C/SiO ₂三相键合界面和界面结构。