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Calculation of the Density of Electronic States in the Valence Band from Experimental Interband Absorption Spectra of Amorphous Semiconductors
Journal of Applied Spectroscopy ( IF 0.7 ) Pub Date : 2021-07-16 , DOI: 10.1007/s10812-021-01200-9
R. G. Ikramov 1 , M. A. Nuriddinova 1 , K. A. Muminov 1
Affiliation  

Experiments and calculations on the density of electronic states of amorphous carbon from an analytic form of the interband absorption spectrum are compared. The proportionality coefficient and energy width of the mobility gap are also determined as fit parameters from an analytic form of the interband absorption spectrum. For the interband absorption spectrum described by the Davis–Mott approximation method based on the Kubo–Greenwood formula for parabolic allowed bands an expression is obtained for determining the density of electronic states in the valence band of amorphous semiconductors. This expression and the interband absorption spectrum obtained from an experiment for amorphous carbon are used to demonstrate the feasibility of determining the densities of electronic states in the valence band.



中文翻译:

从非晶半导体的实验带间吸收光谱计算价带中电子态的密度

比较了从带间吸收光谱的解析形式对无定形碳的电子态密度进行的实验和计算。迁移率间隙的比例系数和能量宽度也被确定为来自带间吸收光谱的分析形式的拟合参数。对于由基于抛物线允许带的 Kubo-Greenwood 公式的 Davis-Mott 近似方法描述的带间吸收光谱,获得了用于确定非晶半导体价带中电子态密度的表达式。该表达式和从无定形碳实验中获得的带间吸收光谱用于证明确定价带中电子态密度的可行性。

更新日期:2021-07-16
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