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Reduction of bright exciton lifetimes by radiation-induced disorder
Physical Review Materials ( IF 3.4 ) Pub Date : 2021-07-15 , DOI: 10.1103/physrevmaterials.5.073802
Christopher N. Singh 1 , Xiang-Yang Liu 1 , Blas Pedro Uberuaga 1 , Stephen J. Tobin 2
Affiliation  

Quantum-radiative decay is a fundamental process in many optoelectronic systems such as laser diodes and solar cells. The bright exciton lifetime is a critical factor in determining the performance of these systems. Motivated by the ever-increasing need for laser systems in space and nuclear applications, we develop a many-particle approach to predict the radiative lifetime under harsh radiation environments. Using GaAs as a model system, we find that radiation-induced band tailing reduces the bright exciton lifetime. This result shows that the efficiency of radiative recombination, in addition to nonradiative recombination, can be affected by ionization radiation. Our approach enables a detailed understanding of the interplay between correlation, localization, and radiation that affect the performance of gain media.

中文翻译:

由辐射引起的无序减少亮激子寿命

量子辐射衰减是许多光电系统(如激光二极管和太阳能电池)中的基本过程。亮激子寿命是决定这些系统性能的关键因素。由于空间和核应用对激光系统的需求不断增加,我们开发了一种多粒子方法来预测恶劣辐射环境下的辐射寿命。使用 GaAs 作为模型系统,我们发现辐射引起的带拖尾会降低亮激子的寿命。该结果表明,除了非辐射复合之外,辐射复合的效率还可能受到电离辐射的影响。我们的方法可以详细了解影响增益介质性能的相关性、定位和辐射之间的相互作用。
更新日期:2021-07-16
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