The paper presents the research results of the temperature dependence of molar heat capacity at a constant pressure within the temperature range from 5 to 300 K for vanadium-based materials. The density of states is calculated for all the materials near the Fermi level. It is shown that for V₃Si and V₃Ge compounds the density of states correlates with the superconducting transition temperature. It is also found that the metal-insulator transition temperature lowers with increasing density of states in V₂O₃ and V_1.973Me_0.027O₃ (Me – Al, Fe, Cr) compounds.

中文翻译：

---

钒化合物的低温电子比热

本文介绍了钒基材料在 5 至 300 K 温度范围内在恒定压力下摩尔热容的温度依赖性的研究结果。计算费米能级附近所有材料的态密度。结果表明，对于V ₃ Si 和V ₃ Ge 化合物，状态密度与超导转变温度相关。还发现金属-绝缘体转变温度随着V ₂ O ₃和V _1.973 Me _0.027 O ₃ (Me – Al、Fe、Cr)化合物中态密度的增加而降低。