In this article, a recessed-anode AlGaN/GaN Schottky barrier diode with a p-GaN cap layer and an anode-connected p-GaN buried layer was proposed and optimized by Silvaco TCAD. The impact of different structural parameters on the trade-off between breakdown voltage and differential specific on-resistance were systematically investigated. Compared with the conventional recessed-anode SBD, the introduction of a p-GaN buried layer with an optimum distance from 2DEG channel can improve the breakdown voltage mildly, reduce the on-resistance and increase the surge current capability obviously at relatively high forward bias. Besides, a p-GaN cap layers slightly decreases the current density but demonstrates an obvious improvement in the breakdown voltage. Therefore, a combining of the p-GaN buried layer and the p-GaN cap layer is promising to achieve the better trade-off between on-resistance and breakdown voltage, resulting in a higher Baliga's FOM.

在本文中，Silvaco TCAD 提出并优化了一种带有 p-GaN 帽层和阳极连接的 p-GaN 埋层的凹入式阳极 AlGaN/GaN 肖特基势垒二极管。系统地研究了不同结构参数对击穿电压和差分特定导通电阻之间权衡的影响。与传统的凹槽阳极SBD相比，引入与2DEG沟道距离最佳的p-GaN埋层可以温和地提高击穿电压，降低导通电阻，并在较高的正向偏压下显着提高浪涌电流能力。此外，p-GaN 帽层略微降低了电流密度，但显示出击穿电压的明显改善。所以，