ZnMgO, a direct wide-bandgap material with high exciton binding energy, has received widespread research attention in optoelectronics. However, its inherent n-type doping facilitates defect-related visible emission, which hampers the required luminescence properties in the UV region. Also, ZnMgO requires post-growth treatment which releases accumulated strain energy, modulates defect states, expands crystallite size, and augments ad-atoms interdiffusion, thereby affecting its bandgap. This work reports the influence of post-deposition annealing parameters like temperature and time on RF sputtered Zn_0.85Mg_0.15O thin films using rapid thermal annealing. The study showed that high temperature annealing aided Mg incorporation in ZnO lattice together with an increase in the grain size due to aggregation of grains. Highest activation energy, 78 meV, and narrowest line width, 34 meV, for D°X peak of 900 °C annealed film was obtained from photoluminescence study. Increasing annealing temperature also showed dissociation of bound exciton peaks into corresponding localized and delocalized exciton states.

ZnMgO是一种具有高激子结合能的直接宽带隙材料，在光电子学领域受到了广泛的研究关注。然而，其固有的 n 型掺杂促进了与缺陷相关的可见光发射，这阻碍了紫外线区域所需的发光特性。此外，ZnMgO 需要生长后处理，释放累积的应变能，调节缺陷状态，扩大微晶尺寸，并增加吸附原子的相互扩散，从而影响其带隙。这项工作报告了沉积后退火参数（如温度和时间）对 RF 溅射 Zn _{0 的影响。85}镁_{0 . 15}O 薄膜使用快速热退火。研究表明，高温退火有助于 Mg 掺入 ZnO 晶格中，同时由于晶粒聚集导致晶粒尺寸增加。从光致发光研究中获得了 900 °C 退火膜的 D°X 峰的最高活化能 78 meV 和最窄的线宽 34 meV。提高退火温度也表明束缚激子峰解离为相应的局域和离域激子态。