The electrical performance of Z 2 -FET and memory operations of matrix are demonstrated at high temperatures up to 125 °C. The sharp subthreshold slope is maintained and the reliable operation is ensured within the memory window of 229 mV even though the turn on voltage of ‘0’- and ‘1’-states are shifted to lower voltage. The ‘0’-state current remains low while the ‘1’-state current gradually increases as the temperature increases leading to higher current margin. At the elevated temperature, the potential barriers are slightly reduced but does not collapse, which leads to the successful memory operation. However, increasing the temperature over 125 °C, the potential barrier at the ‘0’-state is significantly reduced and causes the failure of memory operation with high ‘0’-state current. The matrix demonstrates reliable memory operations without using selector circuits even at 125 °C.

中文翻译：

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高温下无选择器的 Z萤-FET 的存储器操作


Z 2 -FET 的电气性能和矩阵的存储操作在高达 125 °C 的高温下得到验证。即使“0”和“1”状态的开启电压转变为较低电压，仍能保持尖锐的亚阈值斜率并确保在 229 mV 的存储窗口内可靠运行。 “0”态电流保持较低水平，而“1”态电流随着温度升高而逐渐增加，从而导致更高的电流裕度。在升高的温度下，势垒略有减小但不会崩溃，从而导致存储操作成功。然而，当温度升高超过125°C时，“0”态的势垒显着降低，导致高“0”态电流的存储器操作失败。即使在 125 °C 的温度下，该矩阵也无需使用选择器电路即可实现可靠的内存操作。