Titanium oxide has been considered a promising candidate for Schottky-type diode application. In this paper, an alternative approach for improving electrical properties of TiOx-based Schottky-type diode has been demonstrated. Compared with the Ag/TiOx/Ti structure Schottky-type diode, by embedding an extra ZrO₂ insulating layer between the Ag/TiOx interface, an extremely high rectifying ratio of 10⁹ can be obtained in the Ag/ZrO₂/TiOx/Ti structure device. The improvement of the electrical properties in the Ag/ZrO₂/TiOx/Ti structure device can be attributed to the localized formation of Ag metal conductive filaments in ZrO₂ layer after switching on.

中文翻译：

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使用额外的 ZrO2 绝缘层提高 TiOx 肖特基型二极管的电性能

氧化钛被认为是肖特基型二极管应用的有希望的候选者。在本文中，一种提高 TiO2 电性能的替代方法X基肖特基型二极管已得到证实。与 Ag/TiO 相比X/Ti 结构肖特基型二极管，通过在 Ag/TiO 之间嵌入额外的 ZrO ₂绝缘层X_{界面，Ag/ZrO 2} /TiO可以得到10 ⁹的极高整流比X/Ti结构装置。_{Ag/ZrO 2} /TiO电学性能的改善X/Ti结构器件可归因于在开启后在ZrO _{2层中局部形成Ag金属导电丝。}