Purpose

This paper aims to present the edge scattering dominant circuit modeling. The effect of crosstalk on gate oxide reliability (GOR), along with the mitigation using shielding technique is further studied.

Design/methodology/approach

An equivalent distributed Resistance Inductance Capacitance circuit of capacitively coupled interconnects of multilayer graphene nanoribbon (MLGNR) has been considered for T Simulation Program with Integrated Circuit Emphasis (TSPICE) simulations under functional and dynamic switching conditions. Complementary metal oxide semiconductor driver transistors are modeled by high performance predictive technology model that drive the distributed segment with a capacitive load of 0.001 fF, V_DD and clock frequency as 0.7 V and 0.2 GHz, respectively, at 14 nm technology node.

Findings

The results reveal that the crosstalk induced delay and noise area are dominated by the overall mean free path (MFP) (i.e. including the effect of edge roughness induced scattering), in contrary to, acoustic and optical scattering limited MFP with the temperature, width and length variations. Further, GOR, estimated in terms of average failure rate (AFR), shows that the shielding technique is an effective method to minimize the relative GOR failure rate by, 0.93e-7 and 0.7e-7, in comparison to the non-shielded case with variations in interconnect’s length and width, respectively.

Originality/value

Considering realistic circuit modeling for MLGNR interconnects by incorporating the edge roughness induced scattering mechanism, the outcomes exhibit more penalty in terms of crosstalk induced noise area and delay. The shielding technique is found to be an effective mitigating technique for minimizing AFR in coupled MLGNR interconnects.

中文翻译：

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相邻多层石墨烯互连中的边缘散射有限串扰分析及其对栅极氧化物可靠性的影响

目的

本文旨在介绍边缘散射主导电路建模。串扰对栅氧化层可靠性 (GOR) 的影响以及使用屏蔽技术的缓解得到进一步研究。

设计/方法/途径

多层石墨烯纳米带 (MLGNR) 的电容耦合互连的等效分布式电阻电感电容电路已被考虑用于功能和动态开关条件下具有集成电路重点 (TSPICE) 模拟的 T 模拟程序。互补金属氧化物半导体驱动晶体管由高性能预测技术模型建模，在 14 nm 技术节点上驱动分布式部分的容性负载为 0.001 fF，V _DD和时钟频率分别为 0.7 V 和 0.2 GHz。

发现

结果表明，串扰引起的延迟和噪声区域受整体平均自由程 (MFP) 支配（即包括边缘粗糙度引起的散射的影响），相反，声学和光学散射限制 MFP 随温度、宽度和长度变化。此外，根据平均故障率 (AFR) 估算的 GOR 表明，与非屏蔽技术相比，屏蔽技术是将相对 GOR 故障率最小化 0.93e-7 和 0.7e-7 的有效方法互连的长度和宽度分别发生变化的情况。

原创性/价值

通过结合边缘粗糙度引起的散射机制考虑 MLGNR 互连的实际电路建模，结果在串扰引起的噪声区域和延迟方面表现出更多的惩罚。发现屏蔽技术是一种有效的缓解技术，可最大限度地减少耦合 MLGNR 互连中的 AFR。