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Etching characteristics of NF3 and F3NO at reactive ion etching plasma for silicon oxide and silicon nitride
Journal of the Korean Physical Society ( IF 0.8 ) Pub Date : 2021-07-15 , DOI: 10.1007/s40042-021-00242-8
Woo Jae Kim 1 , In Young Bang 1 , Ji Hwan Kim 1 , Yeon Soo Park 1 , Hee Tae Kwon 1 , Gi Won Shin 1 , Gi-Chung Kwon 1 , Min-Ho Kang 2 , Yongjun Cho 3 , Byung-Hyang Kwon 3 , Jung Hun Kwak 3
Affiliation  

Reactive ion etching of silicon oxide and silicon nitride was conducted by the injection of nitrogen trifluoride (NF3) and nitrogen oxide trifluoride gas (F3NO). The etching process was studied using a residual gas analyzer (RGA) and optical emission spectroscopy (OES); this included confirming and comparing the characteristics of the F3NO plasma to that of the NF3 plasma by discharging and measuring the pure NF3 plasma and F3NO plasma. Furthermore, silicon oxide and silicon nitride etching were performed using a process gas (NF3, F3NO) and an argon mixture. The plasma etching process was similarly diagnosed by RGA and OES, and the etch rate was calculated by measuring the reflection. The etch rate of silicon oxide during F3NO/Ar plasma etching is approximately 94% of that for NF3/Ar plasma etching and the etch rate of silicon nitride is approximately 76% of that for NF3/Ar plasma etching under the same conditions. The RGA and OES measurements confirmed that more O+, NO+, and O2+ ions were generated in the F3NO plasma than in the NF3 plasma. This difference makes it possible to confirm the variation in etch rates between silicon oxide and silicon nitride.



中文翻译:

氧化硅和氮化硅反应离子蚀刻等离子体中NF3和F3NO的蚀刻特性

通过注入三氟化氮(NF 3)和三氟化氮气体(F 3 NO)来进行氧化硅和氮化硅的反应离子蚀刻。使用残留气体分析仪 (RGA) 和光学发射光谱仪 (OES) 研究蚀刻过程;这包括通过放电和测量纯 NF 3等离子体和 F 3 NO 等离子体来确认和比较 F 3 NO 等离子体与 NF 3等离子体的特性。此外,使用工艺气体(NF 3、F 3NO) 和氩气混合物。RGA和OES类似地诊断等离子体蚀刻工艺,并且通过测量反射来计算蚀刻速率。F 3 NO/Ar等离子刻蚀氧化硅的刻蚀率约为NF 3 /Ar等离子刻蚀的94%,氮化硅的刻蚀率约为NF 3 /Ar等离子刻蚀的76%。使适应。RGA 和 OES 测量证实,在 F 3 NO 等离子体中产生的O +、NO +和 O 2 +离子比在 NF 3 中产生的更多等离子体。这种差异使得可以确认氧化硅和氮化硅之间蚀刻速率的变化。

更新日期:2021-07-15
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