Reactive ion etching of silicon oxide and silicon nitride was conducted by the injection of nitrogen trifluoride (NF₃) and nitrogen oxide trifluoride gas (F₃NO). The etching process was studied using a residual gas analyzer (RGA) and optical emission spectroscopy (OES); this included confirming and comparing the characteristics of the F₃NO plasma to that of the NF₃ plasma by discharging and measuring the pure NF₃ plasma and F₃NO plasma. Furthermore, silicon oxide and silicon nitride etching were performed using a process gas (NF₃, F₃NO) and an argon mixture. The plasma etching process was similarly diagnosed by RGA and OES, and the etch rate was calculated by measuring the reflection. The etch rate of silicon oxide during F₃NO/Ar plasma etching is approximately 94% of that for NF₃/Ar plasma etching and the etch rate of silicon nitride is approximately 76% of that for NF₃/Ar plasma etching under the same conditions. The RGA and OES measurements confirmed that more O⁺, NO⁺, and O₂⁺ ions were generated in the F₃NO plasma than in the NF₃ plasma. This difference makes it possible to confirm the variation in etch rates between silicon oxide and silicon nitride.

通过注入三氟化氮（NF ₃）和三氟化氮气体（F ₃ NO）来进行氧化硅和氮化硅的反应离子蚀刻。使用残留气体分析仪 (RGA) 和光学发射光谱仪 (OES) 研究蚀刻过程；这包括通过放电和测量纯 NF ₃等离子体和 F ₃ NO 等离子体来确认和比较 F ₃ NO 等离子体与 NF ₃等离子体的特性。此外，使用工艺气体（NF ₃、F ₃NO) 和氩气混合物。RGA和OES类似地诊断等离子体蚀刻工艺，并且通过测量反射来计算蚀刻速率。F ₃ NO/Ar等离子刻蚀氧化硅的刻蚀率约为NF ₃ /Ar等离子刻蚀的94%，氮化硅的刻蚀率约为NF ₃ /Ar等离子刻蚀的76%。使适应。RGA 和 OES 测量证实，在 F ₃ NO 等离子体中产生的O ⁺、NO ⁺和 O ₂ ⁺离子比在 NF _{3 中产生的更多}等离子体。这种差异使得可以确认氧化硅和氮化硅之间蚀刻速率的变化。