Ga-doped ZnO (GZO)/metal/GZO structures were fabricated on glass substrates to be the transparent conducting layers in this study. GZO films and metal films were deposited at room-temperature by a radio-frequency sputter and a thermal evaporator, respectively. The GZO/Ag/GZO (GAG) structures had poor electrical and optical properties due to the formation of Ag islands on the GZO layer. A 1-nm Cu seed layer was deposited on the GZO layer to fabricate the GZO/Ag/Cu/GZO (GACG) structure to improve its electrical and optical properties. The GACG structure had sheet resistance of 9 Ω, average visible transmittance of 86% and figure of merit of 2.5 × 10−2 Ω−1. In addition, the sheet resistance of the GACG structure kept almost the same after annealing at 300∘C in atmosphere for more than 5 h, which showed good thermal stability.

中文翻译：

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GZO基多层透明导电薄膜的特性

在玻璃基板上制造了 Ga 掺杂的 ZnO (GZO)/金属/GZO 结构，作为本研究中的透明导电层。GZO薄膜和金属薄膜分别通过射频溅射和热蒸发器在室温下沉积。由于在 GZO 层上形成了 Ag 岛，GZO/Ag/GZO (GAG) 结构的电学和光学性能较差。在 GZO 层上沉积 1 nm 铜种子层以制造 GZO/Ag/Cu/GZO (GACG) 结构，以改善其电学和光学性能。GACG 结构的薄层电阻为 9Ω，平均可见光透射率为 86%，品质因数为2.5 × 10-2 Ω-1. 此外，GACG结构的薄层电阻在退火后几乎保持不变300∘C在大气中放置5 h以上，表现出良好的热稳定性。