The output characteristics of In_xGa_1-xN/GaN MQW blue SLEDs are investigated using a detailed theoretical model, in which the effects of spontaneous and piezoelectric polarizations are fully considered. By solving the Schrodinger equation in effective mass approximation, Poisson’s equation, and two level rate equations with no-k selection wavelength dependent gain self-consistently, the influence of these internal fields on the electrical and optical characteristics of MQW SLEDs under bias conditions have been studied. The spontaneous polarization and the piezoelectric polarization changed with indium molarity in our structure at 2.9–3.2 V biased voltages. Below 3.05 V the blue shift of peaks due to band filing and screening of QCSE, and above 3.05 V red shifting due to device heating are seen obviously. With increasing of indium content and polarization fields accordingly in different modeled SLDs, peaks of spectral radiation power were dropped and diagrams were red shifted at the range of 3.0–4.0 nm under various applied voltages. FWHM of modeled devices raises ̴ 0.3–0.4 nm with 1% indium content increasing (0.1356 MV/cm polarization field) in three different SLDs with 19.5%, 20%, and 20.5% indium in QWs. Total light output power of SLDs at 3.2 V dropped 6.22% (7.08 mW) with 1% indium content increasing (according to 0.1356 MV/cm total polarization field).

In _x Ga _1-x的输出特性使用详细的理论模型研究了 N/GaN MQW 蓝色 SLED，其中充分考虑了自发极化和压电极化的影响。通过求解有效质量近似中的薛定谔方程、泊松方程和无k选择波长相关增益自洽的两能级速率方程，这些内部场对偏置条件下MQW SLED的电学和光学特性的影响已经得到学习了。在 2.9-3.2 V 偏置电压下，自发极化和压电极化随我们结构中的铟摩尔浓度而变化。在3.05 V以下，由于QCSE的谱带填充和筛选引起的峰蓝移，以及由于器件加热引起的高于3.05 V的峰红移。随着不同建模SLD中铟含量和极化场的增加，光谱辐射功率的峰值下降，并且图在各种施加电压下在3.0-4.0 nm范围内发生红移。在 QW 中铟含量为 19.5%、20% 和 20.5% 的三种不同 SLD 中，随着 1% 铟含量的增加（0.1356 MV/cm 极化场），模拟器件的 FWHM 提高了 ̴ 0.3–0.4 nm。随着 1% 的铟含量增加（根据 0.1356 MV/cm 总偏振场），SLD 在 3.2 V 下的总光输出功率下降了 6.22% (7.08 mW)。QW 中含有 5%、20% 和 20.5% 的铟。随着 1% 的铟含量增加（根据 0.1356 MV/cm 总偏振场），SLD 在 3.2 V 下的总光输出功率下降了 6.22% (7.08 mW)。QW 中含有 5%、20% 和 20.5% 的铟。随着 1% 的铟含量增加（根据 0.1356 MV/cm 总偏振场），SLD 在 3.2 V 下的总光输出功率下降了 6.22% (7.08 mW)。