Cable routines of most of the commercial transient simulation software like EMTP do not have provision for including the contribution of semiconductor screen in cable impedance and admittance model, although mathematical formulations of impedance and admittance of cable with single and double semiconductor screens are available in the existing literature. Here an attempt is made to develop a general impedance and admittance expressions of underground (UG) cable containing N number of semiconductor screens based on electromagnetic analysis of double layer conductor. The same expressions are reproduced based on circuit analysis to verify the exactness of the expressions derived using the electromagnetic approach. Such general formulations bring the possibility of developing a cable routine that can calculate the impedance and admittance of UG cable with any number of semiconductor screens and thus will overcome the limitations of existing cable routines. Next, the proposed general formulations are applied to obtain the impedance and admittance of UG cable with double and single semiconductor screens directly, which becomes identical to the same derived in the existing literature by rigorous mathematical analysis. Finally, the variations of line parameter and wave characteristics of cable containing single and double semiconductor screens as derived from the general formulations, are observed as a function of semiconductor properties. Those variations are found to be identical with the existing results and thus prove the validity of the proposed general formulations.

大多数商业瞬态仿真软件（如 EMTP）的电缆程序没有规定在电缆阻抗和导纳模型中包括半导体屏蔽的贡献，尽管现有的单半导体屏蔽和双半导体屏蔽电缆的阻抗和导纳的数学公式可用文学。这里尝试开发包含N的地下 (UG) 电缆的一般阻抗和导纳表达式基于双层导体电磁分析的半导体屏幕数量。基于电路分析再现相同的表达式，以验证使用电磁方法导出的表达式的准确性。此类通用公式为开发电缆程序提供了可能，该程序可以计算具有任意数量半导体屏蔽的 UG 电缆的阻抗和导纳，从而克服现有电缆程序的局限性。接下来，应用所提出的一般公式直接获得双半导体屏蔽和单半导体屏蔽的UG电缆的阻抗和导纳，通过严格的数学分析与现有文献中得出的相同。最后，从一般公式导出的包含单和双半导体屏蔽的电缆的线路参数和波特性的变化被观察为半导体特性的函数。发现这些变化与现有结果相同，从而证明了所提出的一般公式的有效性。