Stability Study of Silicon Heterojunction Solar Cells Fabricated with Gallium- and Boron-Doped Silicon Wafers,Solar RRL

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Stability Study of Silicon Heterojunction Solar Cells Fabricated with Gallium- and Boron-Doped Silicon Wafers
Solar RRL ( IF 6.0 ) Pub Date : 2021-07-14 , DOI: 10.1002/solr.202100406
Bruno Vicari Stefani ₁ , Moonyong Kim ₁ , Matthew Wright ₁ , Anastasia Soeriyadi ₁ , Dmitriy Andronikov _{2,

3} , Ilya Nyapshaev _{2,

3} , Sergey Abolmasov _{2,

3} , Konstantin Emtsev _{2,

3} , Alexey Abramov _{2,

3} , Brett Hallam ₁

Affiliation

Herein, a comparison of industrial silicon heterojunction (SHJ) solar cells formed using p-type (boron- or gallium-doped) Czochralski-grown silicon (Cz-Si) wafers is provided. Standard n-type SHJ solar cells are also fabricated as a reference. Boron-doped SHJ solar cells are heavily susceptible to boron–oxygen light-induced degradation (BO-LID), with an open-circuit voltage (V_OC) reduction of 100 mV in some cells with starting V_OC of >720 mV. While an advanced hydrogenation process (AHP) is sufficient to completely stabilize BO-LID in some cells, resulting in stable V_OC of 724 mV, the impact in reducing BO-LID is variable. This suggests that an AHP alone may not be a reliable method of reducing BO-LID in industrial SHJ solar cells. In contrast, SHJ solar cells formed using gallium-doped wafers exhibit V_OC > 730 mV and show no degradation during light-soaking. Yet, the same AHP treatment for gallium-doped SHJ cells results in a 0.4%_abs increase in the conversion efficiency to 22.6% (V_OC of 734 mV). The conversion efficiency of the gallium-doped SHJ solar cells is still lower than the n-type reference cells, which is largely due to a reduced fill factor (FF). Further work is required to overcome this FF limitation to facilitate high-efficiency gallium-doped SHJ solar cells.

中文翻译：

掺镓和掺硼硅片制作的硅异质结太阳能电池的稳定性研究

在此，提供了使用 p 型（掺硼或掺镓）直拉生长硅 (Cz-Si) 晶片形成的工业硅异质结 (SHJ) 太阳能电池的比较。标准的 n 型 SHJ 太阳能电池也被制造作为参考。掺硼 SHJ 太阳能电池非常容易受到硼氧光诱导退化 (BO-LID) 的影响，在某些电池中，开路电压 ( V _OC ) 降低 100 mV，起始V _OC大于 720 mV。虽然先进的氢化工艺 (AHP) 足以完全稳定某些电池中的 BO-LID，从而产生稳定的V _OC724 mV，降低 BO-LID 的影响是可变的。这表明单独的 AHP 可能不是减少工业 SHJ 太阳能电池中 BO-LID 的可靠方法。相反，当使用掺杂了镓的晶片形成SHJ太阳能电池表现出V _OC > 730毫伏，并显示在光浸透没有降解。然而，对于掺镓 SHJ 电池的相同 AHP 处理导致转换效率增加0.4%_绝对值至 22.6%（V _OC为 734 mV）。掺镓 SHJ 太阳能电池的转换效率仍然低于 n 型参考电池，这主要是由于填充因子 (FF) 降低。需要进一步的工作来克服这种 FF 限制，以促进高效的掺镓 SHJ 太阳能电池。

更新日期：2021-09-09

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