Al/TE (top electrode)/AlO_x/Pt RRAM (resistive random access memory) devices with solution-processed spin-coated AlO_x layers annealed at various temperatures (225/250/275 °C) exhibited typical bipolar resistive switching performance with low SET/RESET voltage (<4 V), larger ON/OFF ratio (>10³) and excellent stability (retention time over 10⁴ s and endurance cycles more than 100). Ni and TiN were chosen as the TE, respectively. Better RS characteristics were obtained on Ni/AlO_x/Pt RRAM devices with lower operating voltage and better stability. In addition, the voltage variation between Ni/AlO_x/Pt and TiN/AlO_x/Pt RRAM devices was investigated. Compared with Ni/AlO_x/Pt RRAM devices, TiN/AlO_x/Pt devices operated with higher operation voltage at various annealing temperatures, which indicated the influence of work function difference (△Φ_M) between TE and BE (bottom electrode). The greater the △Φ_M, the more energy consumption and the higher operation voltage were demanded.

具有在不同温度 (225/250/275 °C) 下退火的溶液处理旋涂 AlO _x层的Al/TE（顶部电极）/AlO _x /Pt RRAM（电阻随机存取存储器）器件表现出典型的双极电阻开关性能低 SET/RESET 电压 (<4 V)、更大的 ON/OFF 比 (>10 ³ ) 和出色的稳定性（保持时间超过 10 ⁴ s 和耐久循环超过 100）。分别选择 Ni 和 TiN 作为 TE。在具有更低工作电压和更好稳定性的Ni/AlO _x /Pt RRAM 器件上获得了更好的 RS 特性。此外，Ni/AlO _x /Pt 和 TiN/AlO _x之间的电压变化研究了 /Pt RRAM 设备。与 Ni/AlO _x /Pt RRAM 器件相比，TiN/AlO _x /Pt 器件在不同的退火温度下以更高的工作电压运行，这表明TE 和 BE（底部电极）之间的功函数差异（△Φ _M）的影响。△Φ _M越大，需要的能耗和工作电压越高。