Controlling Domain-Wall Nucleation inTa/Co-Fe-B/MgONanomagnets via LocalGa+Ion Irradiation,Physical Review Applied

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Controlling Domain-Wall Nucleation inTa/Co-Fe-B/MgONanomagnets via LocalGa+Ion Irradiation
Physical Review Applied ( IF 3.8 ) Pub Date : 2021-07-15 , DOI: 10.1103/physrevapplied.16.014039
Simon Mendisch ₁ , Fabrizio Riente ₂ , Valentin Ahrens ₁ , Luca Gnoli ₂ , Michael Haider ₁ , Matthias Opel ₃ , Martina Kiechle ₁ , Massimo Ruo Roch ₂ , Markus Becherer ₁

Affiliation

Comprehensive control of the domain-wall nucleation process is crucial for spin-based emerging technologies ranging from random-access and storage-class memories through domain-wall logic concepts to nanomagnetic logic. In this work, focused

{Ga}^{+}

ion irradiation is investigated as an effective means to control domain-wall nucleation in

Ta

Co

Fe

B

Mg O

nanostructures. We show that, analogously to

{He}^{+}

irradiation, it is not only possible to reduce the perpendicular magnetic anisotropy but also to increase it significantly, enabling bidirectional manipulation schemes. First, the irradiation effects are assessed at the film level, sketching an overview of the dose-dependent changes in the magnetic energy landscape. Subsequent time-domain nucleation characteristics of irradiated nanostructures reveal substantial increases in the anisotropy fields but surprisingly small effects on the measured energy barriers, indicating shrinking nucleation volumes. Spatial control of the domain-wall nucleation point is achieved by employing focused irradiation of preirradiated magnets, with the diameter of the introduced circular defect controlling the coercivity. Special attention is given to the nucleation mechanisms, changing from the coherent radiation of a Stoner-Wohlfarth particle to depinning from an anisotropy gradient. Dynamic micromagnetic simulations and related measurements are used in addition to model and analyze this depinning-dominated magnetization reversal.

中文翻译：

通过局部Ga+离子辐照控制Ta/Co-Fe-B/MgON纳米磁铁中的畴壁成核

畴壁成核过程的全面控制对于从随机存取和存储级存储器到畴壁逻辑概念再到纳米磁性逻辑的基于自旋的新兴技术至关重要。在这项工作中，重点

嘎^{+}

离子辐射被研究作为控制畴壁成核的有效手段

塔

公司

——

铁

——

乙

镁 哦

纳米结构。我们证明，类似于

他^{+}

辐照，不仅可以减少垂直磁各向异性，而且可以显着增加它，从而实现双向操作方案。首先，在薄膜级别评估辐射效应，勾勒出磁能景观中剂量依赖性变化的概述。随后辐照纳米结构的时域成核特性显示各向异性场显着增加，但对测量的能垒的影响却出奇地小，表明成核体积缩小。畴壁成核点的空间控制是通过对预辐照磁体进行聚焦辐照来实现的，引入的圆形缺陷的直径控制矫顽力。特别注意成核机制，从 Stoner-Wohlfarth 粒子的相干辐射变为从各向异性梯度去钉扎。除了建模和分析这种脱销主导的磁化反转之外，还使用动态微磁模拟和相关测量。

更新日期：2021-07-15

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