AbstractSingle crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga2O3 is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga2O3 and the main epitaxial relationship should be $$ (0001)_{ZnO} \parallel (001)_{Ga_2 O_3 } \parallel (0001)_{GaN} $$ and $$ [2 - 1 - 10]_{ZnO} \parallel [010]_{Ga_2 O_3 } \parallel [2 - 1 - 10]_{GaN} $$.

中文翻译：

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在 GaN/蓝宝石 (0001) 衬底上 MBE 生长的 ZnO 薄膜的显微结构研究

摘要 采用分子束外延在 GaN/蓝宝石 (0001) 衬底上生长单晶 ZnO 薄膜。在 ZnO 生长之前，通过在 GaN 表面上的氧等离子体预曝光有意将 Ga2O3 引入 ZnO/GaN 异质结构中。晶体取向和界面微观结构通过 X 射线衍射和透射电子显微镜表征。X 射线衍射分析表明 ZnO 膜具有很强的 c 轴择优取向。横截面透射电子显微镜图像显示在 ZnO/GaN 界面处形成了附加相。通过衍射图的比较，