Based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure constructed on the surface of GaAs/Al_1-xGa_xAs heterostructure by patterning two ferromagnetic stripes, an electron-momentum filter was proposed recently. We further explore the effect of a δ-potential realized by the atomic-layer doping technique on this filter device. It is shown that this filter is sensitive to the δ-potential because the effective potential experienced by electrons in the device depends on the δ-potential. It is also shown that both magnitude and sign of wave-vector filtering efficiency can be tuned by adjusting weight or position of the δ-potential. Therefore, a controllable electron-momentum filter may be obtained for nanoelectronics device applications.

基于反平行非对称双δ-磁势垒半导体微结构，通过图案化两条铁磁条在GaAs/Al _1-x Ga _x As异质结构表面构建，最近提出了一种电子动量滤波器。我们进一步探索了通过原子层掺杂技术实现的δ电位对该滤波器装置的影响。表明该滤波器对δ电位敏感，因为器件中电子所经历的有效电位取决于δ电位。还表明，可以通过调整δ 的权重或位置来调整波矢量滤波效率的大小和符号。-潜在的。因此，可以获得用于纳米电子器件应用的可控电子动量滤波器。