Detrimental Impact of Na Upon Rb Postdeposition Treatments of Cu(In,Ga)Se2 Absorber Layers,Solar RRL

当前位置： X-MOL 学术 › Solar RRL › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Detrimental Impact of Na Upon Rb Postdeposition Treatments of Cu(In,Ga)Se2 Absorber Layers
Solar RRL ( IF 6.0 ) Pub Date : 2021-07-14 , DOI: 10.1002/solr.202100390
Jessica de Wild _{1,

2,

3} , Gizem Birant _{1,

2,

3} , Raghavendran Thiruvallur Eachambadi ₄ , Thierry Kohl _{1,

2,

3} , Dilara G. Buldu _{1,

2,

3} , Guy Brammertz _{1,

2,

3} , Jean V. Manca ₄ , Marc Meuris _{1,

2,

3} , Jef Poortmans _{1,

3,

5,

6} , Bart Vermang _{1,

2,

3}

Affiliation

Passivation of the Cu(In,Ga)Se₂ (CIGS)/Mo back contact using AlO_x is studied to reduce the recombination at this interface. Herein, RbF postdeposition treatment (RbF-PDT), a well-established method to improve absorber and front interface properties is used on back-passivated solar cells. It is found that this combination deteriorates the performance due to formation of an injection barrier at the front and reduced acceptor concentration. Photoluminescence yield and decay times show no indication of increased defect recombination, as both are improved. With time-of-flight secondary ion mass spectroscopy, in-depth and lateral alkali profiles are measured. It is shown that the Na concentration is higher at the AlO_x/Mo back contact and that Rb accumulates at the CdS/CIGS interface. It is hypothesized that Na at the back is released during the RbF-PDT and inhibits Rb diffusion into the CIGS layer. Rb remains at the front and acceptor concentration is reduced. Modeling of dark and light current–voltage characteristics shows that the injection barrier and low doping are responsible for the reduced V _oc and fill factor (FF). It is suggested that the commonly observed FF losses upon heavier alkali PDT can be eliminated by adapting the initial Na amount.

中文翻译：

Na 对 Cu(In,Ga)Se2 吸收层的 Rb 后沉积处理的不利影响

研究了使用 AlO _x钝化 Cu(In,Ga)Se ₂ (CIGS)/Mo 背接触以减少该界面处的复合。在本文中，RbF 后沉积处理 (RbF-PDT) 是一种改进吸收体和前界面性能的成熟方法，用于背面钝化太阳能电池。发现由于在前端形成注入势垒和降低的受体浓度，这种组合使性能恶化。光致发光产率和衰减时间没有显示缺陷复合增加的迹象，因为两者都得到了改善。使用飞行时间二次离子质谱法，可以测量深度和横向碱分布。结果表明，AlO _x处的 Na 浓度较高/Mo 背接触，Rb 在 CdS/CIGS 界面积累。假设背面的 Na 在 RbF-PDT 期间被释放并抑制 Rb 扩散到 CIGS 层。Rb 保留在前沿，受体浓度降低。暗和亮电流-电压特性的建模表明，注入势垒和低掺杂是导致V _oc和填充因子 (FF)降低的原因。建议通过调整初始 Na 量可以消除较重碱 PDT 时常见的 FF 损失。

更新日期：2021-09-09

点击分享查看原文

点击收藏

阅读更多本刊最新论文