Bulk and Interfacial Effects in the Co/NixMn100−x Exchange-Bias System due to Creation of Defects by Ar+ Sputtering,Physica Status Solidi-Rapid Research Letters

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Bulk and Interfacial Effects in the Co/NixMn100−x Exchange-Bias System due to Creation of Defects by Ar+ Sputtering
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-07-14 , DOI: 10.1002/pssr.202100195
Tauqir Shinwari ₁ , Ismet Gelen ₁ , Yasser A. Shokr _{1,

2} , Ivar Kumberg ₁ , Ikramullah ₃ , Muhammad Sajjad ₃ , Wolfgang Kuch ₁ , M. Yaqoob Khan ₃

Affiliation

A series of experiments is carried out to identify the contribution of interface and bulk antiferromagnetic (AFM) spins to exchange bias (EB) in ultrathin epitaxial ferromagnetic (FM)/AFM bilayer samples. These are single-crystalline AFM

{Ni}_{x} {Mn}_{100 - x}

and ferromagnetic Co layers on

{Cu}_{3} Au

(001), deposited under ultrahigh vacuum conditions, in which structural or chemical defects are deliberately introduced by controlled Ar ion sputtering at the surface of the AFM layer or at a certain depth inside the AFM layer. Comparison of the magnetic properties measured by magneto-optical Kerr effect for sputtered and nonsputtered parts of the same sample then allows a precise determination of the influence of sputtering on the AFM layer during the sample preparation, whereas all other parameters are kept identical. The results show that the creation of defects in the bulk of the AFM layer enhances the magnitude of EB and its blocking temperature, but not the creation of defects at the interface. It is also observed that the deeper the insertion of defects in the AFM layer, the higher the value of the EB field and the larger the coercivity, These findings are discussed as the effect of additional pinning centers in the bulk of the AFM layer.

中文翻译：

由于 Ar+ 溅射产生缺陷，Co/NixMn100-x 交换偏置系统中的体积和界面效应

进行了一系列实验，以确定界面和体反铁磁 (AFM) 自旋对超薄外延铁磁 (FM)/AFM 双层样品中交换偏置 (EB) 的贡献。这些是单晶 AFM

你_{X} 锰_{100 - X}

和铁磁 Co 层

铜_{3} 金

(001)，在超高真空条件下沉积，其中结构或化学缺陷是通过在 AFM 层表面或 AFM 层内部一定深度处的受控 Ar 离子溅射故意引入的。比较由磁光克尔效应测量的同一样品的溅射和非溅射部分的磁性，然后可以精确确定样品制备过程中溅射对 AFM 层的影响，而所有其他参数保持相同。结果表明，在 AFM 层的主体中产生缺陷会提高 EB 的大小及其阻挡温度，但不会在界面处产生缺陷。还观察到，AFM 层中的缺陷插入越深，EB 场的值越高，矫顽力越大，

更新日期：2021-09-16

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