In this current study, a modified pseudo two-dimensional (2-D) semi-analytical model for double gate tunnel FETs (DG-TFETs) is introduced. The main regions in the DG-TFET structure are the channel and the depletion regions inside the source and the drain. In such regions, the 2-D Poisson's equation is solved by adjusting suitable boundary conditions. The source and the drain depletion region lengths are calculated precisely by an iterative technique resulting in an accurate prediction of the electrostatic potential. According to the obtained 2-D electrostatic potential, the energy band diagram could be extracted and, consequently, the minimum tunneling width is calculated. Accordingly, the model of drain current is introduced by applying Kane's tunneling model. Further, the source depletion charge and the channel charge are derived, and the terminal capacitance components are then extracted. A comparison between the proposed model and SILVACO TCAD simulations shows a satisfactory agreement that confirms the validation of the presented model robustness.

在当前的研究中，介绍了双栅极隧道 FET (DG-TFET) 的改进伪二维 (2-D) 半解析模型。DG-TFET 结构中的主要区域是源极和漏极内部的沟道和耗尽区。在这些区域中，通过调整合适的边界条件来求解二维泊松方程。源极和漏极耗尽区长度通过迭代技术精确计算，从而准确预测静电势。根据获得的二维静电势，可以提取能带图，从而计算最小隧道宽度。因此，通过应用凯恩的隧道模型引入了漏极电流模型。进一步推导出源耗尽电荷和通道电荷，然后提取终端电容分量。所提出的模型与 SILVACO TCAD 模拟之间的比较显示出令人满意的一致性，证实了所提出模型稳健性的验证。