Mechanical properties of Al_xIn_1−xP_ySb_1−y quaternary alloy in zinc-blend structure lattice-matched to GaSb substrate are studied under the effects of temperature and pressure. The calculations are done based on empirical pseudopotential method modified with virtual crystal approximation joins compositional disorder impact. Such a model provides analytical data for the compositional dependence of the energy band gaps of Al_xIn_1−xP_ySb_1−y/GaSb system. Our results are presented for the elastic constants (C₁₁, C₁₂, C₄₄), elastic moduli (B_u, Y₀, C_s), internal strain (ξ), bond stretching (α) and bond bending force (β) parameters. The alloy of interest is found to be a direct semiconductor within the composition range 0 ≤ x ≤ 0.15 and an indirect one for 0.15 < x ≤ 1. There is a good agreement between our results and the experimental data for its constituents (AlP, AlSb, InP and InSb) which give support for the calculated results of the studied quaternary alloys.

在温度和压力的影响下，研究了与 GaSb 衬底晶格匹配的锌混合结构中的 Al _x In _{1- x} P _y Sb _{1 -y}四元合金的机械性能。计算是基于经验赝势方法进行的，该方法修改了虚拟晶体近似连接成分无序影响。这种模型为Al _x In _{1- x} P _y Sb _{1- y} /GaSb 系统的能带隙的成分依赖性提供了分析数据。我们的结果是针对弹性常数 ( C ₁₁ , C ₁₂, C ₄₄ )、弹性模量 ( B _u , Y ₀ , C _s )、内部应变 ( ξ )、键拉伸 ( α ) 和键弯曲力 ( β ) 参数。发现感兴趣的合金是成分范围 0 ≤ x ≤ 0.15内的直接半导体和 0.15 < x ≤ 1的间接半导体。 我们的结果与其成分（AlP、AlSb , InP 和 InSb) 支持所研究的四元合金的计算结果。