Atomic Layer Deposition (ALD) is employed for the growth of nanometric conformal layers on distinct substrates. In the present work, we demonstrated the attainable consequences on the examination of optical and structural peculiarities of pristine and SHI (swift heavy ions) irradiated ultrathin multilayer samples of Al₂O₃-ZnO fabricated on glass and silicon substrates using the technique based on ALD. Multilayer Al₂O₃-ZnO specimens were irradiated with 100 MeV SHI in the fluence range of 1E12 to 5E13 ions/cm². For a better conception of the impact of ion beam irradiation with high energy on structural parameters like strain, dislocation density, crystallite size was demonstrated by X-Ray Diffraction (XRD). The coefficient of absorption was used to demonstrate the changes that occur in optical bandgap, urbach energy, skin depth and optical density with the function of ion fluence. Photoluminescence (PL) spectra were investigated at room temperature to comprehend the mechanism of changes in peak shifting and intensity of broad and strong emission luminescence spectra at excitation wavelengths of 300 nm were noteworthy. To evaluate the thickness, crystalline quality and quantitative composition of the elements Rutherford Backscattering Spectroscopy (RBS) employing utilizing the He²⁺ with high energy was used and reported. Regulation of optical peculiarities through swift heavy ion beam irradiation explores extensive opportunities for Al₂O₃-ZnO multilayer nanofabrication in optoelectronics domain.

原子层沉积 (ALD) 用于在不同基板上生长纳米保形层。在目前的工作中，我们展示了使用基于 ALD 的技术在玻璃和硅基板上制造的原始和 SHI（快速重离子）辐照超薄多层 Al ₂ O ₃ -ZnO样品的光学和结构特性的检查可达到的结果. 用 100 MeV SHI 在 1E12 至 5E13 离子/cm ²的通量范围内对多层 Al ₂ O ₃ -ZnO 样品进行辐照. 为了更好地了解高能量离子束辐照对应变、位错密度、微晶尺寸等结构参数的影响，通过 X 射线衍射 (XRD) 进行了证明。吸收系数用于证明光学带隙、urbach 能量、趋肤深度和光密度随离子注量的变化而发生的变化。在室温下研究了光致发光 (PL) 光谱，以了解在 300 nm 激发波长下的宽和强发射发光光谱的峰位移和强度变化的机制是值得注意的。使用 He ²⁺评估元素的厚度、结晶质量和定量组成使用并报告了高能量。通过快速重离子束照射调节光学特性为 Al ₂ O ₃ -ZnO 多层纳米制造在光电子领域探索了广泛的机会。